Product Summary

The BC857B is a PNP general purpose transistor designed for general purpose switching and amplification.

Parametrics

Limiting values: (1)VCBO, collector-base voltage at open emitter: -50v max; (2)VCEO, collector-emitter voltage at open base: -45V max; (3)VEBO, emitter-base voltage at open collector: -5V max; (4)IC, collector current (DC): -100mA max; (5)ICM, peak collector current: -200mA max; (6)IBM, peak base current: -200mA max; (7)Ptot, total power dissipation at Tamb ≤ 25 ℃: 250mW max; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃ max; (10)Tamb, operating ambient temperature: -65 to +150℃.

Features

Features: (1)low current (max. 100 mA); (2)low voltage (max. 65 V).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BC857B /T3
BC857B /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-11
Data Sheet
Negotiable 
BC857B,215
BC857B,215
NXP Semiconductors
Transistors Bipolar (BJT) PNP GP 100MA 45V
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC857B,235
BC857B,235
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-11
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC857B-7
BC857B-7
Diodes Inc.
Transistors Bipolar (BJT) PNP BIPOLAR
Data Sheet
Negotiable 
BC857B-7-F
BC857B-7-F
Diodes Inc.
Transistors Bipolar (BJT) PNP BIPOLAR
Data Sheet
0-1: $0.12
1-10: $0.11
10-100: $0.07
100-250: $0.04
BC857BDW1T1
BC857BDW1T1
ON Semiconductor
Transistors Bipolar (BJT) 100mA 50V Dual PNP
Data Sheet
Negotiable 
BC857BDW1T1G
BC857BDW1T1G
ON Semiconductor
Transistors Bipolar (BJT) 100mA 50V Dual PNP
Data Sheet
0-1: $0.16
1-25: $0.10
25-100: $0.08
100-500: $0.04
BC857BLP4-7
BC857BLP4-7
Diodes Inc.
Transistors Bipolar (BJT) 250mW -45V
Data Sheet
0-1: $0.24
1-10: $0.19
10-100: $0.13
100-500: $0.09