(Hong Kong)
Product Summary
The BSM150GT120DN2 is a IGBT Power Module.
Parametrics
Absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200v; (3)Gate-emitter voltage, VGE: ± 20v; (4)DC collector current, TC = 25 ℃, IC: 200A; (5)DC collector current, TC = 80 ℃, IC: 150A; (6)Pulsed collector current, tp = 1 ms, TC = 25 ℃, ICpuls: 400A; (7)Pulsed collector current, tp = 1 ms, TC = 80 ℃, ICpuls: 300A; (8)Power dissipation per IGBT, TC = 25 ℃, Ptot: 1250W; (9)Chip temperature, Tj: + 150 ℃; (10)Storage temperature, Tstg: -40 to + 125℃; (11)Thermal resistance, chip case, RthJC: ≤0.12 K/W; (12)Diode thermal resistance, chip case, RthJCD: ≤0.28K/W; (13)Insulation test voltage, t = 1min., Vis: 2500 Vac; (14)Creepage distance: 16 mm; (15)Clearance: 11mm; (16)DIN humidity category, DIN 40 040: F sec; (17)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56 sec.
Features
Features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM150GT120DN2 |
Infineon Technologies |
IGBT Modules 1200V 150A TRIPACK |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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