Product Summary
The IRF4905 is the Fifth Generation HEXFET from International Rectifier utilizing advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for usein a wide variety of applications.
Parametrics
IRF4905 absolute maximum ratings: (1)Pulsed Drain Current: -260A; (2)Power Dissipation: 200W; (3)Linear Derating Factor: 1.3W/℃; (4)Gate-to-Source Voltage:± 20V; (5)Single Pulse Avalanche Energy: 930mJ; (6)Avalanche Current: -38A; (7)Repetitive Avalanche Energy: 20mJ; (8)Peak Diode Recovery dv/dt: -5.0V/ns; (9)Operating Junction and Storage Temperature Range:-55 to + 175℃; (10)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃.
Features
IRF4905 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switchingl P-Channel; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF4905 |
International Rectifier |
MOSFET MOSFET, P-CHANNEL, -55V, -74A, 20 mOhm, 120 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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IRF4905L |
International Rectifier |
MOSFET P-CH 55V 74A TO-262 |
Data Sheet |
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IRF4905PBF |
International Rectifier |
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC |
Data Sheet |
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IRF4905LPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC |
Data Sheet |
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IRF4905SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF4905S |
International Rectifier |
MOSFET P-CH 55V 74A D2PAK |
Data Sheet |
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IRF4905STRLPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC |
Data Sheet |
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IRF4905STRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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