Product Summary
The MG75Q1BS11 is an N CHANNEL IGBT module. It is available for high power switching applications and motor control applications.
Parametrics
MG75Q1BS11 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector power dissipation: 300W; (4)junction temperature: 150℃; (5)storage temperature range: -40~125℃; (6)isolation voltage: 2500V; (7)screw torque: 2/3 N.m.
Features
MG75Q1BS11 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement-mode; (5)the electrodes are isolated from case.
Diagrams

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                            ![]() MG750-1.00K-1%  | 
                            ![]() Caddock Electronics Inc  | 
                            ![]() RES 1K 1% HIGH VOLT AXIAl 7.5  | 
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                            ![]() MG750-10.0M-1%  | 
                            ![]() Caddock  | 
                            ![]() Thick Film Resistors - Through Hole 10M ohm 1%  | 
                            ![]() Data Sheet  | 
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                            ![]() MG750-20M-1%  | 
                            ![]() Caddock  | 
                            ![]() Thick Film Resistors - Through Hole  | 
                            ![]() Data Sheet  | 
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                            ![]() MG750-402K-1%  | 
                            ![]() Caddock Electronics Inc  | 
                            ![]() RES 402K 1% HIGH VOLT AXIAL 7.5  | 
                            ![]() Data Sheet  | 
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                            ![]() MG750-5.00K-1%  | 
                            ![]() Caddock  | 
                            ![]() Thick Film Resistors - Through Hole 5K ohm 1%  | 
                            ![]() Data Sheet  | 
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                            ![]() MG75P  | 
                            ![]() Other  | 
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                            ![]() Data Sheet  | 
                            ![]() Negotiable  | 
                            
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 (Hong Kong) 
                         
                        
                                    







