(Hong Kong)
Product Summary
The DDB6U104N16RR is a Diode Module with Chopper-IGBT.
Parametrics
Maximum rated values: (1)repetitive peak reverse voltage, Tvj = - 40℃ to Tvj max, VRRM for Rectifierdiode: 1600 V; (2)RMS forward current (per chip), IFRMSM for Rectifierdiode: 60 A; (3)output current, TC = 100℃, Id for Rectifierdiode: 105 A; (4)surge forward current, Tvj = Tvj max, tp = 10ms, IFSM for Rectifierdiode: 550 A; (5)I2t-value Tvj = Tvj max, tp = 10ms,I2t for Rectifierdiode: 1500 A2s; (6)collector-emitter voltage, VCES for IGBT: 1200 V; (7)DC-collector current, TC = 80℃, IC for IGBT: 50 A; (8)repetitive peak collektor current, tp = 1ms, ICRM for IGBT: 100 A; (9)total power dissipation, TC = 25℃, Ptot for IGBT: 350 W; (10)Gatgate-emitter peak voltage, VGE for IGBT: ± 20 V; (11)repetitive peak reverse voltage, VRRM for Fast diode: 1200 V; (12)DC forward current, TC = 80°C, IF for Fast diode: 25 A; (13)repetitive peak forward current, tp = 1ms, IFRM for Fast diode: 50 A; (14)insulation test voltage, f = 50Hz, t = 1min NTC connected to baseplate, VISOL for Modul: 2,5 kV.
Features
Specifications: (1)Type: Diode Module; (2)Mounting Style: Through Hole; (3)Package / Case: DDB6; (4)Gate Trigger Current: 5 mA; (5)Output Current: 50 A; (6)Standard Pack Qty: 500.
Diagrams
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 DDB6U104N16RR |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 105A UN-CNTL |
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DDB6U100N12R |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 100A UN-CNTL |
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DDB6U100N12RR |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 100A UN-CNTL |
Data Sheet |
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DDB6U100N16R |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 100A UN-CNTL |
Data Sheet |
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DDB6U100N16RR |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 100A UN-CNTL |
Data Sheet |
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DDB6U104N16RR |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 105A UN-CNTL |
Data Sheet |
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DDB6U104N18RR |
Infineon Technologies |
Rectifiers 1.8KV 25A |
Data Sheet |
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