(Hong Kong)
Product Summary
The SGH15N60RUFD is an Insulated Gate Bipolar Transistor (IGBT) providing low conduction and switching losses as well as short circuit ruggedness. The SGH15N60RUFD is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Applications include AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Parametrics
SGH15N60RUFD asolute maximum ratings: (1)Collector-Emitter Voltage: 600V; (2)Gate-Emitter Voltage:± 20V; (3)Pulsed Collector Current: 45A; (4)Operating Junction Temperature: -55 to +150℃; (5)Storage Temperature Range: -55 to +150℃.
Features
SGH15N60RUFD features: (1)Short circuit rate; (2)High speed switching; (3)Low saturation voltage; (4)High input impedance; (5)CO-PAK, IGBT with FRD.
Diagrams
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 SGH15N60RUFD |
Other |
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Data Sheet |
Negotiable |
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SGH15N60RUFDTU |
Fairchild Semiconductor |
IGBT Transistors Dis Short Circuit Rated IGBT |
Data Sheet |
Negotiable |
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