(Hong Kong)
Product Summary
The IXTM10N100 is a Mega MOSFET. The applications of the device are Switch-mode and resonant-mode power supplies, Motor controls, Uninterruptible Power Supplies (UPS) DC choppers.
Parametrics
IXTM10N100 absolute maximum ratings: (1)VDSS: 1000 V; (2)VDGR: 1000 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 10 A; (6)IDM: 40 A; (7)PD: 300 W; (8)TJ: -55 to +150℃; (9)TJM: 150℃; (10)Tstg: -55 to +150℃.
Features
IXTM10N100 features: (1)International standard packages; (2)Low RDS (on) HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Low package inductance (< 5 nH), easy to drive and to protect; (5)Fast switching times.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IXTM10N100 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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IXTM10N100 |
Other |
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Data Sheet |
Negotiable |
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IXTM11N80 |
Other |
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Data Sheet |
Negotiable |
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IXTM12N100 |
Other |
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Data Sheet |
Negotiable |
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IXTM12N50A |
Other |
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Data Sheet |
Negotiable |
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IXTM12N90 |
Ixys |
MOSFET 12 Amps 900V 0.9 Ohms Rds |
Data Sheet |
Negotiable |
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IXTM13N80 |
Other |
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Data Sheet |
Negotiable |
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